Single-Crystal Wafers & Substrates
Sapphire Wafers & Substrates
Bare single-crystal sapphire (α-Al₂O₃) wafers and substrates for thin-film deposition, epitaxial research, and materials development.
- Germany-based supplier and manufacturing partner
- Manufacturing to customer specifications
- Optical inspection and measurement against specified requirements
- From single components and prototypes to repeat supply
Product overview
Sapphire is single-crystal α-aluminum oxide (Al₂O₃), combining high hardness, chemical resistance, electrical insulation, and thermal stability. These properties make it suitable for selected thin-film deposition, epitaxial research, and elevated-temperature processing applications.
Key advantages
- High hardness and wear resistance
- Good chemical stability under many processing conditions
- Thermal stability for elevated-temperature applications
- Electrical insulation and useful dielectric properties
- Broad optical transparency across a wide spectral range, depending on material grade and thickness
Typical specifications
| Material | Single-crystal sapphire (α-Al₂O₃) |
|---|---|
| Round diameters | Ø25.4 mm; Ø50.8 mm; other diameters on request |
| Rectangular dimensions | 10 × 3 mm; 10 × 5 mm; 10 × 10 mm; 20 × 20 mm; other sizes on request |
| Thickness | 0.5 mm; 1.0 mm; other thicknesses on request |
| Thickness tolerance | ±0.02 mm; ±0.005 mm |
| Crystal orientation | C-plane (0001); A-plane (11-20); R-plane (1-102); M-plane (10-10) |
| Orientation tolerance | ±0.5° |
| Surface finish | Single-side polished (SSP) or double-side polished (DSP) |
| Surface roughness | ≤5 Å (5 × 5 µm measurement area) |
| Edge orientation accuracy | 2°; 1° on request |
| Special tilt angle | 1°–45° |
Properties
- Growth method
- Czochralski
- Crystal structure
- Corundum (trigonal)
- Space group
- R-3c (No. 167)
- Lattice parameters
- a ≈ 4.758 Å; c ≈ 12.991 Å
- Density
- 3.98 g/cm³
- Mohs hardness
- 9
- Melting point
- 2040 °C
- Specific heat capacity
- 0.757 J/(g·K) at room temperature
- Thermal conductivity
- 35.1 W/(m·K) ∥ c-axis; 33.0 W/(m·K) ⊥ c-axis
- Thermal expansion coefficient
- 4.3 × 10⁻⁶ K⁻¹ ∥ a-axis; 3.9 × 10⁻⁶ K⁻¹ ∥ c-axis (294 K); 9.2 × 10⁻⁶ K⁻¹ ∥ a-axis; 9.3 × 10⁻⁶ K⁻¹ ∥ c-axis (757 K)
- Dielectric constant (εᵣ)
- 9.4 ∥ a-axis; 11.5 ∥ c-axis (295 K); 9.3 ∥ a-axis; 11.3 ∥ c-axis (80 K)
- Dielectric loss tangent (tan δ)
- < 1 × 10⁻⁶ at 80 K (microwave)
- Transmission range
- 0.17–5.5 µm, depending on material grade and thickness
View related products
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Optical Windows
Flat, wedged, tubular, and Brewster window configurations, including chip-free, unchamfered edge options.
RFQ PREPARATION
What to send for a quote
Please send your drawing or technical specification together with the following information.
- Required crystal orientation and dimensions
- Thickness, dimensional tolerances, and geometry requirements
- Required miscut (off-axis) angle and direction
- Surface finish and required surface roughness
- Required quantity